| 摘要 |
An insulating layer of one or more of the group TiO2, BeO, ZrO2, AlN and Si3N4 is deposite on a substrate of e.g. a semi-conductor material by heating the insulating material to a temperature between 700 and 1200 DEG C. in a halogen or a hydrogen halide atmosphere that reversibly reacts with the material, and heating the substrate to a temperature between 350 DEG and 800 DEG C., which is lower than that of the insulating material, to cause the material to deposit on the substrate. The reaction may take place in a closed chamber or an open chamber to which the gas is continuously supplied and exhausted. The process may also be used to form capacitors, sheaths for solar cells, and tunnelling devices. |
