| 摘要 |
PCT No. PCT/FR92/00338 Sec. 371 Date Sep. 29, 1993 Sec. 102(e) Date Sep. 29, 1993 PCT Filed Apr. 15, 1992 PCT Pub. No. WO92/19029 PCT Pub. Date Oct. 29, 1992.An optoelectronic device having a very low stray capacitance and its production process. This optoelectronic device comprises an n-doped semiconductor substrate layer, (46); on said substrate layer a lateral confinement layer (50) of semiconductor material doped so as to be semi-insulating; a stripe (30) incorporating an active material (32), said stripe being buried in the lateral confinement layer and in contact with the substrate layer, the lateral confinement layer having a groove (52) hollowed out above and along the stripe; an n-doped semiconductor blocking layer (70) deposited on each side of the groove on the lateral confinement layer; a p-doped vertical semiconductor layer (60) deposited on the blocking layer and filling the groove, the blocking layer being made from a material having a different composition from that of the lateral and vertical confinement layers; a first electrical contact (80, 90) on the vertical confinement layer at least vertically of the stripe (30) and a second electrical contact (44) on the substrate layer.
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