| 摘要 |
In the prodn. of a component having integrated electro-optical and/or photonic functions, in which a dielectric layer is deposited on a quantum well layer of III-V material, followed by heat treatment, the novelty is that the dielectric layer is a doped SiOx layer (2>x>0 ) with a thickness, dopant type, dopant concn. and heat treatment conditions selected to shift the forbidden band energy of the quantum well layer region, on which the dielectric layer is deposited, in order to impart the requisite electro-optical and/or photonic properties to this region. |
