METHOD OF MAKING A CAPACITOR

摘要

The capacitor is applied to an analog circuit and a bypolar elements of a semiconductor device. The method comprises the steps of: (i) depositing and doping a first polysilicon layer used to lower electrodes of the capacitor on the semiconductor substrate; (ii) growing a dielectric material layer on the first polysilicon layer; (iii) depositing and doping a second polysilicon layer used to upper electrodes of the capacitor on the dielectric material layer; (iv) forming the upper electrodes of the capacitor by etching the defined portion of the second polysilicon layer to use the masks for the upper electrodes; and forming the lower and gate electrodes by etching the defined portion of the first polysilicon layer to use the masks for the lower and gate electrodes.