| 摘要 |
PURPOSE:To perform display with the effect interferrence of light by providing unevenness on the substrate surface layer. CONSTITUTION:The desired pattern is formed by making photo etching for the oxide film of the N type substrate. After forming the oxide film again, the oxide film is etched with NH4F and the desired unevenness is formed on the Si substrate. Next, PN junction is formed with B diffusion, the P type layer is partly etched for the rear side, exposing the N type substrate and forming electrodes. Further, the reflection preventive film such as SiO2 is uniformly formed on the front surface. When the unevenness around 10 mum in pitch and 5 mum in groove width is provided on the display such as graph, sufficiently clear effect of light interferrence can be obtained and the design effect can be increased. |
