| 摘要 |
PURPOSE:To provide a semiconductor laser element having a structure allowing suppression of an increase in contact resistance on a mesa while constricting the current in a striped part and manufacture thereof. CONSTITUTION:A first conductivity type first clad layer 101, an active layer 102 and a second conductivity type second clad layer 103, a second conductivity type third clad layer 104, a second conductivity type fourth clad layer, a second conductivity type cap layer 106 which are of an opposite conductivity type to the first conductivity type are formed on a first conductivity type semiconductor substrate 100 in this order. Then, the third and fourth clad layers 104, 105 and a cap layer 106 constitute the striped mesas whereby the stripe width of the fourth clad layer 104 is narrower than those of the fourth clad layer 105 and the cap layer 106 thus generating undercut. |
