METHOD OF PASSIVATING WAFER WITH MULTIPLE QUANTUM WELL STRUCTURE

摘要

PURPOSE: To improve performance and evenness of a GaAs/AlGaAs multi- quantum well infrared ray detectors by forming a multi-quantum wells (superlattice wafer) and performing a hydrogen plasma passivation process with a wafer which has just been grown. CONSTITUTION: With molecular beam epitaxy, a GaAs/AlGaAsQWIP wafer is grown (step 202). Then, the wafer is passivation-processed (step 204) with hydrogen plasma. Then, the wafer is processed in a known process step, to form (step 206) plural infrared ray detecting devices. The passivation step is performed by exposing a wafer which has just been grown to hydrogen plasma at a temperature of 200-250 deg.C. Thus, the performance and evenness of a GaAs/ AlGaAs multi-quantum well infrared ray detector is improved.