| 摘要 |
PURPOSE:To obtain excellent ohmic properties by forming an ohmic electrode layer on a p-type II-VI compound semiconductor containing one element of II and VI group elements, and forming the layer of p-type II-VI compound semiconductor such as CdSe, etc. CONSTITUTION:An In electrode 2 is formed on a lower surface of a p-type GaAs substrate 1, and Cd and Se molecular beams are simultaneously emitted to the substrate 1 in which a low resistance p-type ZdSe layer 3 is previously grown thereby to grown an ohmic electrode layer made of p-type CdSe 4, etc. Then, Au is depositted on the upper surface of the ohmic electrode layer of the CdSe 4, heat treated in an inert atmosphere, thereby forming an Au electrode 5. Thus, excellent ohmic properties can be obtained. |
