| 摘要 |
PURPOSE:To enable a resist pattern of high reliability to be formed, to enhance the accuracy of machining a wafer and to enable refining by removing a refratory layer on the surface of a resist prior to development. CONSTITUTION:A chemically amplified positive resist 2 composed of polyhydroxystyrene as base resin and an onium salt as a photooxidizer is applied to a semiconductor wafer 1. Next, exposure is performed to project and transfer a mask pattern B onto the chemically amplified positive resist 2 to form an exposed portion. After baking, exposure is performed a second time just before development. During the second exposure, the overall surface of the chemically amplified positive resist 2 is exposed by about 0.1mum from the surface and by a smaller amount of exposure than the normal amount of exposure. Finally, development is carried out using an alkaline developer and the chemically amplified positive resist 2 in the exposed portion 3 and the overall surface of the chemically amplified positive resist 2 are removed to form a clean resist pattern where no refratory layer is left on the surface of the resist. |
