| 摘要 |
PURPOSE:To provide a semiconductor storage device wherein ferroelectric material is not deteriorated by polarization inversion incident to the reading and the writing of storage contents, and the number of times of reading and writing is not limited on account of so-called fatigue, by using specified material as the ferroelectric material. CONSTITUTION:In a semiconductor storage device wherein a memory cell is constituted of a transistor for charge transfer and a ferroelectric material capacitor, the main component of ferroelectric material 10 is constituted of one out of (Pb1-aCaa)TiO3(where a=0.01-0.4), (Pb1-bSmb)TiO3 (where b=0.05-0.15), and (pb1-cGdc)TiO3 (where c=0.05-0.15). By using ferroelectric material wherein kp is smaller than 0.05 differently from the conventional PZT, as the ferroelectric material 10 of the ferromagnetic material capacitor, the influence of deterioration of the ferroelectric material caused by the repetition of polarization inversion is not present. As the result, the number of times of reading and writing is remarkably increased from 10<8> up to 10<23> or larger. |
