| 摘要 |
<p>PURPOSE:To provide a nonvolatile semiconductor storage and its operating method capable of stably writing and erasing in a short time. CONSTITUTION:A positive voltage pulse conducting a memory transistor Ma1 is applied to the control gate G of the precharged memory transistor Ma1. Then, a negative voltage pulse discharging charges stored in the floating gate of the memory transistor Ma1 to the drain electrode is applied. Succeedingly, a control pulse generation circuit 2 is provided, and the positive voltage pulse lower than the mentioned positive voltage pulse and reducing the electrical conductivity of the memory transistor Ma1 is applied.</p> |
