发明名称 METHOD FOR BOTH SIDED LAPPING OF COMPOUND SEMICONDUCTOR WAFER
摘要 PURPOSE:To obtain a method for both sided lapping suitable for mass-production of small warpage by adapting a single sided lapping technique for both sided lapping. CONSTITUTION:If there are no relative movements, an abrasive develops no rolling nor lapping. For that purpose, firstly the direction of rotation of an upper surface plate 1 is made different from the direction of revolution of a carrier 4 to lap only one side of a wafer 3 on the upper surface plate 1 side. Meanwhile, the number and the direction of rotation of the lower surface plate 2 are equalized with those of revolution of the carrier 4 so that the opposite side of the wafer 3 on the lower side plate 2 side may not be lapped. After one side of the wafer 3 is lapped, its relation is reversed, that is, the direction of rotation of the lower surface plate 2 is made different from the direction of revolution of the carrier 4 to lap only the opposite side of the wafer 3 on the lower surface plate 2 side. Meanwhile, the number and the direction of the upper surface plate 1 are equalized with those of revolution of the carrier 4 so that one side of a lapped wafer may not be lapped.
申请公布号 JPH07201789(A) 申请公布日期 1995.08.04
申请号 JP19930335347 申请日期 1993.12.28
申请人 HITACHI CABLE LTD 发明人 KOMATA CHIKAFUMI;AKIYAMA HIROKI;MARUYAMA TAKATOSHI
分类号 B24B37/04;B24B37/10;H01L21/304 主分类号 B24B37/04
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