| 摘要 |
PURPOSE:To obtain two semiconductors formed of group III nitride semiconductor by forming two semiconductor layers made of the group III nitride semiconductor on intermediate layers formed on both side surfaces if a sapphire board, removing only the two intermediate layers by wet etching, and peeling the two semiconductor layers from the board. CONSTITUTION:Intermediate layers 2a, 2b made of zinc oxide are formed on both side surfaces of a sapphire board 1. Two semiconductor layers 3a, 3b made of group III nitride semiconductor are respectively formed on the layers 2a, 2b. Only the layers 2a, 2b are removed by wet etching using solution for etching only the zinc oxide to peel the layers 3a, 3b from the board 1. Thus, two semiconductors made of the group III nitride semiconductor can be easily manufactured. |
