| 摘要 |
PURPOSE: To improve the collection efficiency of a lateral-type bipolar transistor by providing two conductive regions which are doped in large amount and between which an emitter and a collector, equipped with an active base are formed and a layer of semiconductor alloy having a specific valence electron zone offset on the surface of a conductive semiconductor layer on a substrate. CONSTITUTION: On a silicon semiconductor wafer, a silicon layer 36 which is lightly N-doped is constituted to a 1 to 3μm thickness, and an N<+> and a P<+> -embedded layer which are doped selectively in large amount are formed. A layer 38 of silicon germanium is supplied onto it, and a specific band gap offset is selected and given. The P<+> -region which is doped in large amount is formed in a surface area, extending through an alloy layer and provided with an emitter 44 and a collector 46. An active base region 48 is given to the alloy layer. Namely, a thin layer 40 of silicon dioxide is provided to form a silicon hetero-structure lateral bipolar transistor, which has a base 50, an emitter 52, and a collector 54.
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