| 摘要 |
PURPOSE:To prevent decrease in resolution due to an increased attenuation of a radioactive ray obliquely incident in a radiation detector using a semiconductor substrate and a hetero-junction between amorphous carbon films on the substrate. CONSTITUTION:Amorphous carbon in which attenuation of radioactive ray and particularly an alpha-ray is low has excellent chemical resistance. The carbon is used for a protective layer 4. Further, an entire thickness of a layer for forming a radiation incident window is formed 1.6mum or less, thereby obtaining resolution of 2% or less required for an alpha-ray detector. When a thickness of a barrier layer 2 is made 2-500nm, a uniform and complete junction structure can be formed.
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