SILICON FIELD EMISSION DEVICE AND MANUFACTURE MATHODE

摘要

forming thermal oxide masks by photo-etching after thermal oxidation of a high density silicon substrate; reactive ion etching on the silicon substrate to form conical emitters; thermal oxidating to form the plane emitters to have sharp tips; forming insulating films self-aligned through the masks; shrinking each thickness of the masks and insulating films in the vertical and horizontal directions by densification at a high temp.; forming gate electrodes to enclose one part of the insulating films by depositing a gate metal layer on the insulating films; and removing simultaneously the upper layers including the masks by lift-off process