发明名称 METHOD FOR FORMING METALLIC CONTACT
摘要 PURPOSE: To form an ideal contact structure by forming a protective film of ball border metal, through an etching process. CONSTITUTION: On a completed wafer having a via hole for an etched terminal in an insulator, a chromium layer 13 and a copper layer 14 are stuck in a blanket manner. Then a photoresist is applied and patterned. A solder 15 is applied by plating through a mask, and the photoresist is removed. Then the copper layer 14 is etched by using solder dots 15 as a mask. Then the solder 15 is fused in hydrogen to form a solder ball 15. Lastly, positive-type photoresist is applied to form a uniform coating. The photoresist below the solder ball 15 is not exposed, so the solder ball 15 is used as a self-matching exposure mask.
申请公布号 JPH07201871(A) 申请公布日期 1995.08.04
申请号 JP19940300461 申请日期 1994.12.05
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 RICHIYAADO YUUJIIN GEGENWAASU;ANSONII FURANSHISU AANORUDO
分类号 H01L29/43;H01L21/28;H01L21/60;H01L23/485 主分类号 H01L29/43
代理机构 代理人
主权项
地址
您可能感兴趣的专利