| 摘要 |
PURPOSE:To provide a manufacturing method for an LC element and a semiconductor device which can be manufactured easily, the part assembling work in the post-process can be omitted, the LC element can be formed as a part of IC and SI, and also the capacitor which is in the form of distributed constant can be changed as necessary. CONSTITUTION:An LC element 100 contains a spiral-shaped n<-> region 22, formed in the vicinity of the surface of a p-Si substrate, and a spiral-shaped p<+> region formed on a part of the n<-> region 22, and a pn junction layer 26 is formed by them. Also, a spiral electrode 10 is formed on the surface of the p<-> region 20, and the spiral electrode 10 and the above-mentioned n<-> region 22 functions as an inductor. A capacitor is formed in the form of distributed constant using a pn junction layer 26 in inverted bias, and excellent attenuation characteristics can be obtained. |
