| 摘要 |
<p>PURPOSE:To provide a thin-film transistor (TFT) panel capable of preventing deterioration of the characteristics of the TFTs by static electricity generated during production stages and inspecting shorting and disconnecting of wirings. CONSTITUTION:Gate buses 11, 12 which are plural row electrodes and drain buses 21, 22... which are plural column electrodes are disposed across interlayer insulating films on a transparent insulating substrate. The TFTs are formed near the respective intersected parts of the row electrodes and the column electrodes. Gate electrodes 111, 112... of these TFTS are connected to the row electrodes and drain electrodes 211, 212... are connected to the column electrodes. Pixel electrodes 411, 412... are connected to source electrodes 311, 312.... These row electrodes and the column electrodes are connected through gate bus connecting conductors 1 and drain bus connecting conductor 2 by resistors 5 and more particularly semiconductors having nonlinear conductive characteristics to be made lower in resistance when applied with a high voltage in the peripheral part of the transparent insulating substrate.</p> |
