| 摘要 |
<p>PURPOSE:To prevent power breakage and to improve in ESD resistance by a method wherein the diodes, formed in polycrystalline silicon, are parallel- connected in opposite direction with each other (the anode and the cathode of the diodes are connected and two terminals are formed). CONSTITUTION:An N-type silicon epitaxial layer 2 is formed on an N<+> type silicon substrate 1, a P<-> type layer 2, a P-layer 3 and an N-layer 5 are provided on the N<-> layer 2. On a temperature detection diode part, a P-layer 11 and an N-layer 5 are provided on the polycrystalline silicon layer 7 which is formed simultaneously with a polycrystalline silicon layer 7 on which a semiconductor element is formed. An insulating film 10 and an interlayer insulation film 8 are coated thereon. An aluminum electrode 9 is brought into contact with the P-layer 11 and the N-layer 5. The above-mentioned temperature detection polycrystalline silicon diodes 15 are inversely connected with each other in parallel.</p> |
