| 摘要 |
<p>PURPOSE:To realize a characteristic value of a bulk body in a thin film mode, provide a thin film having various functions, and achieve a high-brid form with an element using this by forming a ceramic thin film on a substrate, and forming a lamination body of an electric conductive layer and a ceramic layer. CONSTITUTION:A thin film of tantalum pentoxide is formed on a silicone wafer in a sputtering method to be a substrate for forming a thin film lamination body. Next, a Pt thin film 1 is deposited in a sputtering method as a first electric conductive layer. Next, a ceramic thin film 2 is manufactured in a desired film thickness. An MOCVD method, sputtering method, etc., may be used for manufacturing the thin film. A desired part of this ceramic layer is eliminated by photolithography or etching. These processes are repeated in accordance with the number of times of lamination, and a Pt film is deposited finally for providing contact with each electrode, thereby a thin film lamination body is manufactured.</p> |
