| 摘要 |
<p>PURPOSE:To form an emitter part with high precision, and reduce the distance between the emitter part, a base part and a collector part by forming the emitter part, the base part and the collector part of a vacuum transistor on the respectively specific crystalline plane of a compound semiconductor substrate. CONSTITUTION:A mask region 12 is formed on the (111) B plane of a compound semiconductor substrate 10 consisting of GaAs or the like, and an opening part 14, an emitter part 16, a base part 18 and a collector part 32 are formed within the region 12. The region 12 is regular triangular plane, and orthogonal to the directions [-1, -1, 0], [-1, 0, --1] and [0, -1, -1] of the substrate 10. The (111) B plane is exposed on the bottom part of the opening part 14. The emitter part 16 is formed on the (111)B plane, and each plane of a triangular pyramid consists of (110). The base part 18 is adjacent to the region 12, and formed on the (111) B plane, and the collector part 32 is provided on the upper part of the emitter part 16. This constitution forms the emitter part 16 with high reproducibility.</p> |
