FORMATION OF SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: To provide a shallow groove separation structure formed by a process having the reduced number of processing processes and heat balance. CONSTITUTION: A groove is packed with the liquid accumulation of an insulating semiconductor oxide, the heat treatment of the accumulated oxide is operated, and a thermal oxide layer 30 of high quality is formed on a boundary face between the accumulated oxide film and a substrate 12. This process applies a separation structure for reducing stresses and charge leakages. When a grinding stop layer 14 is provided on a semiconductor material main body, this structure can be easily made flat. The void of the accumulated oxide and a contaminant can be almost removed by self-aligned accumulation on the groove within the capacity of an opening on resist used for forming the groove.