| 摘要 |
PURPOSE:In a method of dry etching a mercury-cadmium-tellurium substrate selectively, the selection ratio of etching between the mercury-cadmium-tellurium substrate and a resist mask is enough, removal of the resist mask after the etching is easily and with a simple process and without damaging the substrate, the substrate is etched selectively. CONSTITUTION:A plasma is generated with an etching gas that contains particles with a bond between nitrogen and hydrogen and the mercury-cadmium- tellurium substrate 10 is etched with the mask of a resist film 11 formed on the mercury-cadmium-tellurium substrate 10. |
