摘要 |
PURPOSE:To provide a semiconductor device in which a heterojunction of a type I is effectively realized by using semiconductor material of a type II having an energetically alternate inhibited bands. CONSTITUTION:A second layer 12 having a periodical structure, where a first semiconductor thin layer 12a having a thickness not exceeding an electron wave-diameter (De Brogrie wavelength of electron) using a second semiconductor material and a second thin layer 12b having a thickness not exceeding an electron wave-diameter using a third semiconductor material are alternately and in a plurality of layers vertically stacked, on a first layer 10 using a first semiconductor material. The second semiconductor material is related to the first semiconductor material of the type II where the forbidden band is energetically in an alternate arrangement, and the third semiconductor material is related to the second semiconductor material of the type II where the inhibited band is energetically in an alternate arrangement. |