| 摘要 |
PURPOSE:To provide an optimal method for doping, by carrying out a doping step after at least a gate insulating film in a doping region is removed and the region is made in a state, in which a heavy element like phosphorus or arsenic permeates adequately. CONSTITUTION:After island-shaped silicon regions 103 and 104 are formed, silicon oxide films 105 and 106 are formed thereon. Then, a phosphorus-doped silicon film is formed and patterned to form an NMOS gate 107 and a PMOS gate 108. A p-type impurity region 110 is formed by implanting ions including boron in a plasma doping method. Then, the silicon oxide film 105 is etched with a mask 112 to expose the silicon region 103, and ions including phosphorus are implanted therein to form n-type impurity regions 113 and 114. In this way, a CMOS is formed by using a TFT with a good productive yield. |
