Vorrichtung zur Plasmaerzeugung

摘要

The invention relates to a device for generating plasma by the inductive coupling of H.F. energy by means of a aerial. One problem of purely inductive coupling is that, owing to its finite inductance, there are potentials on the aerial which result in a capacitive component in plasma excitation. This capacitive component is undesirable as it leads to excessively high plasma potentials which have an adverse effect on substrate processing. The device of the invention is distinguished by an aerial which completely surrounds the plasma production chamber in the form of a ring, in which the two aerial leads are connected thereto at opposite points on the ring. The low inductance of this aerial results in a manifest reduction in the capacitive component of the plasma excitation in relation to prior art devices. The simple shape of the aerial makes for a compact design of the device. The main field of application of the device for plasma generation of the invention is in the plasma-supported processing of substrates in semiconductor manufacture.