发明名称 |
METHOD OF MAKING SINGLE CRYSTAL GALLIUM NITRIDE |
摘要 |
A method of making a single crystal Ga*N article (10), including the steps of: providing a substrate (20) of crystalline material having a surface (16) which is epitaxially compatible with Ga*N; depositing a layer of single crystal Ga*N (26) over the surface of the substrate; and etchably removing the substrate from the layer of single crystal Ga*N, to yield the layer of single crystal Ga*N as said single crystal Ga*N article. The invention is an article aspect relates to bulk single crystal Ga*N articles, such as are suitable for use as a substrate for the fabrication of microelectronic structures thereon, and to microelectronic devices comprising bulk single crystal Ga*N substrates, and their precursor structures. |
申请公布号 |
WO9520695(A1) |
申请公布日期 |
1995.08.03 |
申请号 |
WO1995US00868 |
申请日期 |
1995.01.26 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
TISCHLER, MICHAEL, A.;KUECH, THOMAS, F. |
分类号 |
C30B33/00;H01L21/205;H01L33/00;(IPC1-7):C30B33/08 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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