发明名称 CAVITY-CONTAINING STRUCTURE AND METHOD FOR MAKING SAME
摘要 <p>A cavity-containing structure and a method for making same are disclosed. The method for making a structure comprising a substrate (2) and a thin surface wafer (12) made of non-conductive material secured to one side (1) of the substrate (2), said substrate (2) containing cavities (10) flush with said side (2), comprises the steps of etching cavities (10) into one side (1) of a substrate, said cavities having, in the surface plane of the substrate, at least one dimension which is a function of the thickness of the surface wafer, whereby said wafer is properly held in place; bonding a wafer (12) made of non-conductive material to the side (1) of the substrate (2); and reducing the thickness of the wafer (12) to provide said thin surface wafer.</p>
申请公布号 WO9520824(A1) 申请公布日期 1995.08.03
申请号 WO1995FR00078 申请日期 1995.01.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE;BRUEL, MICHEL 发明人 BRUEL, MICHEL
分类号 H01L23/34;B81C1/00;H01L21/02;H01L21/48;H01L21/58;H01L23/473;(IPC1-7):H01L21/58;H01L21/473 主分类号 H01L23/34
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