Verfahren zur Herstellung eines Halbleiterlasers.

摘要

There is provided a method for the production of a semiconductor laser device which emits laser light from an end facet thereof. This method comprises the steps of: forming a multi-layered structure (13) including an active layer (12) for laser oscillation on a semiconductor substrate (11); etching the semiconductor substrate (11) and the multi-layered structure (13) to form a plurality of striped grooves parallel to each other in such a manner that a plurality of projections (21) are formed on the side face of the multi-layered structure (13) in the striped grooves; separating the projections (21) from the multi-layered structure (13) to form a pair of cleavage planes (23) each functioning as a resonator facet; forming a large-band-gap layer (16) on at least one of the cleavage planes (23) on the light-emitting side, the large-band-gap layer having a larger band gap than that of the active layer (12); forming a reflecting film (17,18) on the larger-band-gap layer; and finally cleaving the semiconductor substrate (11) and the multi-layered structure (13) to obtain a plurality of semiconductor laser devices.