| 发明名称 |
Gas sensor used in microelectronic applications |
| 摘要 |
Gas sensor (1), formed analogous to an FET, consists of a semi-insulating substrate (9), n- or p-doped III/V-semiconductor (6), a source (2), a sink (3) and a suitable contact (20,21) and passivation (7). A gas-permeable gate metallisation (4) is provided, whose thickness is chosen such that the gate metallisation (4) forms an equipotential surface. |
| 申请公布号 |
DE4403152(A1) |
申请公布日期 |
1995.08.03 |
| 申请号 |
DE19944403152 |
申请日期 |
1994.02.02 |
| 申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE |
发明人 |
STEINER, KLAUS, DR.-ING., 79194 GUNDELFINGEN, DE |
| 分类号 |
G01N27/414;(IPC1-7):G01N27/414;H01L21/338;H01L49/00 |
主分类号 |
G01N27/414 |
| 代理机构 |
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