| 摘要 |
A reactive ion etching or magnetically enhanced reactive ion etching system consists of a cathode support structure (12), a shield structure (18) disposed around the cathode, an insulator (26) disposed between the cathode and the shield structure, and a clamping ring capable of mating with the top edge of the insulator. The insulator (26) has a generally cylindrical shape with a flange (28) that extends outward between the shield structure (18) and the clamping ring (14). A gap (24) between the clamping ring and the top edge of the insulator is controlled to 20 thousandths of an inch or less to restrict an RF coupling path between the shield and the cathode. In addition, the flange acts to interrupt the plasma conduction path between the shield structure and the cathode. By inhibiting plasma conduction between the shield and the cathode, reactive ion etching systems in accordance with the present invention operate in a higher pressure, higher power regime without arcing or exciting a secondary plasma. <IMAGE> |
