Semiconductor structure and method of fabricating the same.

摘要

A semiconductor structure includes a first semiconductor barrier layer formed on a compound semiconductor substrate, a semiconductor carrier confinement layer formed on the semiconductor barrier layer, and a second semiconductor barrier layer arranged on the semiconductor carrier confinement layer. The semiconductor carrier confinement layer includes a plurality of islands spaced apart from each other and having an almost equal thickness, and a thin quantum well film arranged between the islands and having a thickness smaller than the thickness of the islands.