发明名称 |
Stepped substrate semiconductor laser for emitting light at slant portion. |
摘要 |
In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer (5) at the slant portion (F2 7b) is set to 2.5 mu m or less or the angle between the flat portion (F1a, F3a; 7a) and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field. <IMAGE> |
申请公布号 |
EP0665618(A1) |
申请公布日期 |
1995.08.02 |
申请号 |
EP19940118358 |
申请日期 |
1994.11.22 |
申请人 |
FUJITSU LIMITED |
发明人 |
ANAYAMA, CHIKASHI, FUJITSU LIMITED;FUKUSHIMA, TAKESHIRO, FUJITSU LIMITED;FURUYA, AKIRA, FUJITSU LIMITED |
分类号 |
H01S5/223;H01S5/30;H01S5/32;H01S5/343 |
主分类号 |
H01S5/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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