| 摘要 |
<p>A semi-conductive pressure transducer (see Division H1) comprises a body of semi-conductive alloy having at least two semi-conductive components, one of which is a direct transition material (i.e., a material adapted to direct transitions of electrons between valence and conduction bands) and the other an indirect transition material. The direct transition material is preferably gallium arsenide, but may also be indium antimonide, indium arsenide, indium phosphide and alloys therebetween, or lead sulphide, lead selenide or lead telluride. The indirect transition material is preferably gallium phosphide, but may alternatively be aluminium antimonide, germanium or silicon, or a material such as gallium antimonide which has an extremely small energy gap between its two conduction band edges and is normally classed as a direct transition semi-conductor. The Specification includes several formulae for calculating the relative proportions of the components in terms of the energy differences between the conduction band edges in the component materials and in the alloy itself.</p> |
