发明名称 Method for depositing another thin film on an oxide thin film having perovskite crystal structure
摘要 A method for depositing a thin film of a material on an oxide thin film having a perovskite type crystal structure formed on a substrate comprising steps of depositing a seed layer of a single crystal of the material having an extremely thin thickness at a relatively high substrate temperature on the oxide thin film having a perovskite type crystal structure and depositing a thin film of the material on the seed layer at a lower substrate temperature.
申请公布号 US5438037(A) 申请公布日期 1995.08.01
申请号 US19940227389 申请日期 1994.04.14
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 TANAKA, SO
分类号 C01G1/00;C01G3/00;C04B41/89;C30B29/22;H01L39/24;(IPC1-7):H01L39/24 主分类号 C01G1/00
代理机构 代理人
主权项
地址