| 摘要 |
1,073,551. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORPORATION. May 28, 1965 [July 2, 1964], No. 22769/65. Heading H1K. In making an integrated circuit structure comprising a substrate of one conductivity type with a surface layer of the opposite type divided into isolated areas by heavily doped walls of the one conductivity type formed by diffusion of impurities through the layer to the substrate, one region of a PN diode is formed within one of the areas to be isolated in the diffusion process used to form the walls. Such a structure, incorporating also a transistor, shown in Fig. 2, is made as follows. N+ inclusions are formed by diffusing phosphorus into the surface of a 20 ohm. cm. P-type silicon substrate and are subsequently buried beneath an epitaxially grown N-type layer. Boron is next diffused into this layer to form dividing walls 79 and the P + diode region 60. Rings of N + material joining the N+ inclusions to the surface are formed by phosphorus diffusion, after which the transistor base 54 is formed. Finally the N+ surface layer 58 of the diode and transistor emitter 52 are produced by phosphorus diffusion. Subsequently the surface of the layer is coated with a passivating oxide layer, gold, copper, iron or manganese is diffused throughout the silicon body from a vapour deposited layer on the opposite face and electrodes attached as shown to the various regions. In a modified structure (Fig. 5, not shown) the N+ surface layer of the diode is isolated from the N+ region.
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