| 摘要 |
PURPOSE:To obtain an infrared-ray detector of an extrinsic photoconduction type making use of the transition especially to a semiconductor impurity level owing to photo excitation by an infrared-ray detector array arranged one-dimentionally through a normal IC process, and also to obtain excellent noise characteristics. CONSTITUTION:This detector consists of substrate 4 impurity doped, stepping- stone-shaped diffusion layers 6 of the same conduction type, and vapor-deposition electrodes 8 on them; as for this structure, selective diffusion is done by silicon oxidized film 7 by planar technique, and diffusion layer 5 is formed on the entire surface of reverse surface 4-B of the silicon substrate. In the structure like this, the density of diffusion layer 6 more than, for example, 10<19> pieces/cm<3> results in a compression state and even the cooling nearly until extrinsic photoconduction is shown makes diffusion layer 6 close to metal, so that it can work as an electrode. |
