发明名称 |
Fabrication of optically reflecting ohmic contacts for semiconductor devices |
摘要 |
A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. |
申请公布号 |
AU1604395(A) |
申请公布日期 |
1995.08.01 |
申请号 |
AU19950016043 |
申请日期 |
1995.01.18 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
BHUSHAN L SOPORI |
分类号 |
H01L21/285;H01L31/0232 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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