发明名称 |
High breakdown voltage semiconductor device |
摘要 |
A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.
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申请公布号 |
US5438220(A) |
申请公布日期 |
1995.08.01 |
申请号 |
US19930085056 |
申请日期 |
1993.07.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAKAGAWA, AKIO;YASUHARA, NORIO;MATSUDAI, TOMOKO;YAMAGUCHI, YOSHIHIRO;OMURA, ICHIRO;FUNAKI, HIDEYUKI |
分类号 |
H01L21/336;H01L21/74;H01L21/762;H01L27/06;H01L27/092;H01L27/12;H01L29/06;H01L29/08;H01L29/40;H01L29/739;H01L29/74;H01L29/745;H01L29/749;H01L29/78;H01L29/786;H01L29/861;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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