| 摘要 |
<p>PURPOSE:To simplify and miniaturize the whole constitution, and increase the quantity of receiving light, by integrally forming a semiconductor laser, a light emitting part using a reflecting mirror and a light receiving element, in an unified body on a common semiconductor substrate. CONSTITUTION:A first process for forming a first trench G1 on the main surface of a semiconductor substrate 9, an epitaxial growth process, and a process for forming a second trench G2 are adopted. From the processes, a semiconductor laser LD is formed on a semiconductor substrate 9 in which the vertical side surface 28 of the second trench G2 is made one end surface of a resonator by at least a first laminated semiconductor part S1. A light receiving element, e.g. a photodiode PD,is formed by at least a second laminated semiconductor part S2. A reflecting mirror is formed by a side surface 27 of a specified slant crystal face. The semiconductor laser LD a light emitting part 1 using a reflecting mirror, and a photoreceptor element 4 are formed in an unified body on the common semiconductor substrate 9. Thereby mutual position alignment is accurately made possible.</p> |
