发明名称 LEVEL SHIFTER CIRCUIT
摘要 PURPOSE:To improve performance at high speed by shortening the transient time of an operation by speedily turning off a Pochannel MOSFET (PchMOSFET), which holds a former state, by providing an N-channel MOSFET (NchMOSFE). CONSTITUTION:When changing the signal voltage of an input terminal 9 from L to H, the output of a low power supply voltage operated inverter 1 is changed from H to L. Next, NchMOSFET 5 and 13 are turned on by the output change of a low power supply voltage operated inverter 2, and the ON resistance of a PchMOSFET 7 is enlarged. Thus, the potential of a node 11 is pulled down by the FET 5. At the same time, the ON resistance of a PchMOSFET 8 is decreased, and the potential of a node 12 is increased. When the potential of the terminal 9 is completely turned to H, the FET 5 and 13 are turned on, NchMOSFET 6 and 14 are turned off, the FET 7 is turned off, the FET 8 is turned on, and the potential of a high power supply voltage operated circuit output terminal 10 is equalized with a high power supply voltage and stabilized.
申请公布号 JPH07193488(A) 申请公布日期 1995.07.28
申请号 JP19930332593 申请日期 1993.12.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAMOTO HIROO;OTANI KAZUHIRO
分类号 H03K19/0185;H03K19/017 主分类号 H03K19/0185
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