| 摘要 |
PURPOSE:To provide a semiconductor storage with a memory cell in a structure suited for microminiaturization. CONSTITUTION:This storage is provide with an insulator layer 22, a thin-film transistor formed on the insulator layer 22, trenches 23-1 and 23-2 formed at the insulator layer, and a trench capacitor where substrate-side electrodes 24-1 and 24-2 and storage node electrodes 29-1 and 29-2 are laid out inside the trenches 23-1 and 23-2, thus preventing a depletion layer from being spread and minimizing the distance between the trenches 23-1 and 23-2 as much as possible. |
