发明名称 DATA OUTPUT CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: To provide a data output circuit capable of eliminating the transition of unnecessary data in a data output buffer, reducing operation current consumption, and improving data access time and yield in a semiconductor memory device on which an ECO circuit is mounted. CONSTITUTION: This circuit is provided with an input signal detection part 50B for detecting the transition of an external input signal Api buffered by an input buffer and outputting a signal Spi showing the transition. A control part 50C generating a control signalϕPZM for selecting the prescribed data output buffer in accordance with signals SUM1 and SUM2, which are obtained by NOR-operating the signal Spi, and a data output control part 50D for outputting a driving signalϕOE for driving the data output buffer with the output signalϕPZM of the control part 50C as input are provided. The driving signalϕOE is enabled after data which is read from a memory cell is inputted to the data output buffer.</p>
申请公布号 JPH07192466(A) 申请公布日期 1995.07.28
申请号 JP19920290219 申请日期 1992.10.28
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KEIKON;CHIYOU SEIKI
分类号 G11C11/409;G06F11/10;G11C7/10;G11C7/22;G11C11/401;G11C29/00;G11C29/42;(IPC1-7):G11C11/409 主分类号 G11C11/409
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