| 摘要 |
PURPOSE:To restrain impurities diffusion from a substrate at the time of manufacturing or impurities diffusion between semiconductors, by forming a tetrahedral amorphous carbon layer, a photoelectric conversion layer, and a photo detection surface electrode in order on a substrate. CONSTITUTION:On a metal electrode substrate 11 composed of stainless, the following are laminated in order; an N-type tetrahedral amorphous carbon layer 12, a photoelectric conversion layer, i.e., an N-type amorphous semiconductor layer 14, an I-type amorphous semiconductor layer 15, a P-type amorphous semiconductor layer 16, and a transparent conductive film electrode 11, on which a collector electrode 18 is formed. Since the tetrahedral amorphous carbon film 12 does not form grain boundary, diffusion of impurities can be more effectively blocked. A photoelectric conversion layer of excellent quality can be formed by laminating amorphous semiconductor layers in the order of the N-layer, the I-layer, and the P-layer. Ohmic contact can be obtained by putting a P<+> type amorphous semiconductor between the P-type carbon thin film and the N-type photoelectric conversion layer. |
