| 摘要 |
PURPOSE:To simplify manufacturing process and reduce cost by leading out the potential of an electrode from a bonding pad, via a P-type electrode leading- out part isolated by a cavity part and a P-type electrode leading-out part which constitutes an inverse junction to an N-type epitaxial layer and electrically isolated. CONSTITUTION:A P-type electrode leading-out part 52 and a P-type electrode leading-out part 53 on the part 52 constitute inverse junctions to N-type epitaxial layers 51, 56. Thereby the P-type electrode leading-out part 52 and the P-type electrode leading-out part 53 are electrically isolated from the N-type epitaxial layers 51, 56, and isolated from a retaining part 3 of a P-type silicon substrate 1 by a cavity part 60. Hence a bonding pad 9 is electrically connected with an electrode 14 via the P-type electrode leading-out parts 53, 52, and a positive potential can be applied to the electrode 14, so that electrostatic system self- diagnosis is made possible. |
