| 摘要 |
PURPOSE:To secure the small threshold value current density by erecting a quantum well structure either on a specific crystal plane or an oblique face making a specific angle with this specific crystal plane. CONSTITUTION:A quantum well structure is erected either on a (211)-plane or an oblique face making an angle not exceeding 5 deg. with the (211)-plane in the title semiconductor quantum well laser structure. At this time, this laser structure is erected by successively growing an n type Al0.45Ga0.55As layer 13, an Al0.3Ga0.7As/GaAs quantum well layer 14 comprising a GaAs layer held by the Al0.3Ga0.7As layers 13 and 15 on both sides, a p-type Al0.45Ga0.55 layer 15 and a p-type GaAs layer 16 on an n-type (211) GaAs substrate 12 by molecular beam epitaxy. When a current is fed to this laser structure, a polarization having a field component in the inner face direction of the quantum well layer 14 oscillates laser using a cleavage plane 17 in the directions (0, -1, 1) as a cavity face. Through these procedures, the title semiconductor quantum well laser structure having long time endurance yet small threshold value current density can be erected. |
