| 摘要 |
PURPOSE:To avoid the intrusion of an impurity gas into an active layer in the thermal step during the element manufacture of a semiconductor laser. CONSTITUTION:In order to grow a P-InP clad layer 6 above an InGaAsP layer 8 by MOCVD process, the flow rate or the concentration of an impurity gas is decreased or lowered in the side close to the active layer 8 while increasing or hightening them as distant from the active layer 8. Through these procedures, the impurity concentration in the P-InP clad layer is made lower in the active layer side while higher as distant from the active layer side. |
