| 摘要 |
PURPOSE:To provide a photomask with which the contrast of the projected image of a mask pattern in photolithography is improved. CONSTITUTION:The photomask 1 used in photolithography has a light transmissive substrate 2 having two main planes 2a, 2b facing each other and light shielding patterns 3 formed on the one main surface 2a. The other main surface 2b includes plural pieces of ruggedness which are irregularly distributed. The intervals and heights of such ruggedness exist within a range of 50 to 1000 times the wavelength of the light used in photolithography. |
