| 摘要 |
PURPOSE:To obtain a good ohmic contact to a p-type ZnxMgyCd1-x-ySzSe1-z semiconductor by forming an ohmic contact layer havmng an alloy layer which includes either Cd or Hg between the semiconductor layer and an electrode metal layer. CONSTITUTION:On a p-type ZnxMgyCd1-x-ySzSe1-z (0<=x, y, z<=1, x+y<=1) semiconductor l, metal Cd is deposited in the thickness of 50nm by vacuum evaporation or other method. Then, the semiconductor l 19 heat-treated at 300 deg.C for 10 minutes in a nitrogen atmosphere. By this heat treatment, the diffusion occurs between the semiconductor 1 and the metal Cd and thereby an allay layer in correspondence with a composition ratio of 'x' is formed. Nextly, Au is vacuum-evaporated on this ohmic contact layer 2 to form Au electrodes 3. By this method, a good ohmic contact to the p-type ZnxMgyCd1-x-ySzSe1-z (0<=x, y, z<=, x+y<=1) semiconductor l, which has been difficult to materialize in the conventional method, can be obtained easily without giving a bad effect on a light emitting device. |
